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 2STW4466
High power NPN epitaxial planar bipolar transistor
Features

High breakdown voltage VCEO = 80V Complementary to 2STW1693 Typical ft = 20MHz Fully characterized at 150 oC
Applications
3 2 1
Audio power amplifier TO-247
Description
The device is a NPN transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCESAT behaviour. Recommended for 45W to 70W high fidelity audio frequency amplifier output stage. Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking 2STW4466 Package TO-247 Packaging Tube
Order code
2STW4466
October 2007
Rev 1
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www.st.com 10
2STW4466
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
3 4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
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Electrical ratings
1
Table 2.
Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ
Electrical ratings
Absolute maximum rating
Parameter Collector-emitter voltage (IE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Total dissipation at Tc = 25C Storage temperature Max. operating junction temperature Value 100 80 6 6 12 60 -65 to 150 150 Unit V V V A A W C C
Table 3.
Symbol Rthj-amb
Thermal data
Parameter Thermal resistance junction-amb ________________max Value 2.08 Unit C/W
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Electrical characteristics
2STW4466
2
Electrical characteristics
(TCASE = 25C; unless otherwise specified)
Table 4.
Symbol ICBO IEBO V(BR)EBO V(BR)CBO V(BR)CEO VCE(sat) (1) VBE (1) hFE fT CCBO ton tstg toff
Electrical characteristics
Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Collector-emitter breakdown voltage (IC = 0) Collector-emitter breakdown voltage (IE = 0) Collector-emitter breakdown voltage (IB = 0) Collector-emitter saturation voltage Base-emitter voltage DC current gain Transition frequency Collector-base capacitance Turn-on time Storage time Fall time Test conditions VCB = 100V VEB = 6V IE = 1mA IC = 100A IC = 50mA IC = 2A IC = 6A VCE = 5V IC = 2A IC = 0.5A IE = 0 IC = 3A IB = 200mA IB = 600mA IC = 5A VCE = 4V VCE = 12V 50 20 50 0.15 1.5 0.1 6 100 80 0.6 1.5 1.5 120 MHz pF ns ns ns Min. Typ. Max. 0.1 0.1 Unit A A V V V V V V
VCB = 10V f = 1MHz VCC = 30V
IB1 = -IB2 = 0.3A
Note: 1
Pulsed duration = 300 s, duty cycle 1.5%
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Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2. DC current gain Figure 3. DC current gain
Figure 4.
Collector-emitter saturation voltage
Figure 5.
Base-emitter saturation voltage
Figure 6.
BT(ON) time
Figure 7.
Resistive load switching time
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Electrical characteristics
2STW4466
Collector-base and collectoremitter capacitance
Figure 8.
Switching time resistive load Figure 9.
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Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
2STW4466
TO-247 Mechanical data
mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75
Dim. A A1 b b1 b2 c D E e L L1 L2 oP oR S
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Revision history
4
Revision history
Table 5.
Date 11-Oct-2007
Document revision history
Revision 1 First release Changes
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